FDC6320C

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
SOT-23-6 Thin, TSOT-23-6
MOSFET N/P-CH 25V SSOT6
Date Sheet

在庫數 18000

1+： $0.33414
10+： $0.31522
100+： $0.29738
500+： $0.28055
1000+： $0.26467

小計金額 $0.33414

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：220mA 120mA
Number of Elements：2
Turn Off Delay Time：7.4 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1997
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：4Ohm
Terminal Finish：Tin (Sn)
Additional Feature：LOGIC LEVEL COMPATIBLE
Max Power Dissipation：700mW
Terminal Form：GULL WING
Current Rating：220mA
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：900mW
FET Type：N and P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：0.4nC @ 4.5V
Rise Time：6ns
Polarity/Channel Type：N-CHANNEL AND P-CHANNEL
Fall Time (Typ)：6 ns
Continuous Drain Current (ID)：220mA
Threshold Voltage：850mV
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：25V
Dual Supply Voltage：25V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：850 mV
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 18000

1+： $0.33414
10+： $0.31522
100+： $0.29738
500+： $0.28055
1000+： $0.26467

小計金額 $0.33414

類似スペック製品

FDC6320C ON Semiconductor
最低価格$0.334136 在庫數 18000
FDC6303N ON Semiconductor
最低価格$0.659347 在庫數 3367
FDC6301N ON Semiconductor
最低価格$0.724478 在庫數 500
FDC6302P ON Semiconductor
最低価格$0.381869 在庫數 3000

Phone

FDC6320C