FDS6982AS

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
ON SEMICONDUCTOR - FDS6982AS - Dual MOSFET, Dual N Channel, 8.6 A, 30 V, 0.011 ohm, 10 V, 1.4 V
Date Sheet

在庫數 7365

1+： $1.25174
10+： $1.18089
100+： $1.11404
500+： $1.05098
1000+： $0.99149

小計金額 $1.25174

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：187mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：6.3A 8.6A
Number of Elements：2
Turn Off Delay Time：24 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®, SyncFET™
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：28MOhm
Voltage - Rated DC：30V
Max Power Dissipation：2W
Terminal Form：GULL WING
Current Rating：8.6A
Number of Channels：2
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
Turn On Delay Time：12 ns
Power - Max：900mW
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：28m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Rise Time：7ns
Fall Time (Typ)：3 ns
Continuous Drain Current (ID)：8.6A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：30A
FET Technology：METAL-OXIDE SEMICONDUCTOR
Recovery Time：19 ns
Max Junction Temperature (Tj)：150°C
FET Feature：Logic Level Gate
Nominal Vgs：1.4 V
Turn Off Time-Max (toff)：64ns
Turn On Time-Max (ton)：34ns
Height：1.75mm
Length：5mm
Width：3.99mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 7365

1+： $1.25174
10+： $1.18089
100+： $1.11404
500+： $1.05098
1000+： $0.99149

小計金額 $1.25174

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FDS6982AS