FDS6612A

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET N-CH 30V 8.4A 8-SOIC
Date Sheet

在庫數 3000

1+： $1.29306
10+： $1.21987
100+： $1.15082
500+： $1.08568
1000+： $1.02423

小計金額 $1.29306

仕様よくある質問

Factory Lead Time：18 Weeks
Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Package / Case：8-SOIC (0.154, 3.90mm Width)
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Power Dissipation (Max)：2.5W Ta
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Current - Continuous Drain (Id) @ 25℃：8.4A Ta
Turn Off Delay Time：22 ns
Series：PowerTrench®
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：22MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：30V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：8.4A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：22m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：560pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：7.6nC @ 5V
Rise Time：5ns
Vgs (Max)：±20V
Fall Time (Typ)：3 ns
Continuous Drain Current (ID)：8.4A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Dual Supply Voltage：30V
Nominal Vgs：1.9 V
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3000

1+： $1.29306
10+： $1.21987
100+： $1.15082
500+： $1.08568
1000+： $1.02423

小計金額 $1.29306

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FDS6612A