FDS6990AS

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
MOSFET 2N-CH 30V 7.5A 8SOIC
Date Sheet

在庫數 15000

1+： $0.85922
10+： $0.81059
100+： $0.76470
500+： $0.72142
1000+： $0.68058

小計金額 $0.85922

仕様よくある質問

Factory Lead Time：10 Weeks
Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Package / Case：8-SOIC (0.154, 3.90mm Width)
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：8
Weight：187mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7.5A
Turn Off Delay Time：24 ns
Number of Elements：2
Series：PowerTrench®, SyncFET™
Published：2005
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：22mOhm
Terminal Finish：Tin (Sn)
Max Power Dissipation：900mW
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Qualification Status：Not Qualified
Number of Channels：2
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
Turn On Delay Time：8 ns
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：22m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：550pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：14nC @ 5V
Rise Time：8ns
Fall Time (Typ)：8 ns
Continuous Drain Current (ID)：7.5mA
Threshold Voltage：1.7V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：7.5A
Drain to Source Breakdown Voltage：30V
Dual Supply Voltage：30V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)：150°C
FET Feature：Logic Level Gate
Nominal Vgs：1.7 V
Width：4mm
Length：5mm
Height：1.75mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 15000

1+： $0.85922
10+： $0.81059
100+： $0.76470
500+： $0.72142
1000+： $0.68058

小計金額 $0.85922

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FDS6990AS