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FDS8958A
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Arrays
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET N/P-CH 30V 7A/5A 8SOIC
Date Sheet
在庫數 60000
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time:18 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154, 3.90mm Width)
- Number of Pins:8
- Current - Continuous Drain (Id) @ 25℃:7A 5A
- Number of Elements:2
- Turn Off Delay Time:14 ns
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2007
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- Termination:SMD/SMT
- Resistance:28mOhm
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Max Power Dissipation:2W
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Current Rating:7A
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2W
- Power - Max:900mW
- FET Type:N and P-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:28m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:575pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
- Rise Time:13ns
- Polarity/Channel Type:N-CHANNEL AND P-CHANNEL
- Fall Time (Typ):9 ns
- Continuous Drain Current (ID):7A
- Threshold Voltage:1.9V
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):7A
- Drain to Source Breakdown Voltage:30V
- Dual Supply Voltage:30V
- Avalanche Energy Rating (Eas):54 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:Logic Level Gate
- Nominal Vgs:1.9 V
- Height:1.5mm
- Length:5mm
- Width:4mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 60000
小計金額 $0.00000
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