FDC6302P

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
SOT-23-6 Thin, TSOT-23-6
MOSFET SSOT-6 P-CH -25V
Date Sheet

在庫數 3000

1+： $0.38187
10+： $0.36025
100+： $0.33986
500+： $0.32062
1000+： $0.30248

小計金額 $0.38187

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：120mA
Number of Elements：2
Turn Off Delay Time：9 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1997
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
Termination：SMD/SMT
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-25V
Max Power Dissipation：900mW
Terminal Form：GULL WING
Current Rating：-120mA
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：900mW
Turn On Delay Time：5 ns
Power - Max：700mW
FET Type：2 P-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：11pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：0.31nC @ 4.5V
Rise Time：8ns
Drain to Source Voltage (Vdss)：25V
Fall Time (Typ)：5 ns
Continuous Drain Current (ID)：-120mA
Threshold Voltage：-1V
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：-25V
Dual Supply Voltage：-25V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：-1 V
Height：1.12mm
Length：3mm
Width：1.68mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3000

1+： $0.38187
10+： $0.36025
100+： $0.33986
500+： $0.32062
1000+： $0.30248

小計金額 $0.38187

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FDC6302P