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NDS9945

在庫數 79999

  • 1+: $2.03527
  • 10+: $1.92006
  • 100+: $1.81138
  • 500+: $1.70885
  • 1000+: $1.61212

小計金額 $2.03527

仕様 よくある質問
  • Lifecycle Status:ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time:11 Weeks
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154, 3.90mm Width)
  • Number of Pins:8
  • Weight:230.4mg
  • Transistor Element Material:SILICON
  • Number of Elements:2
  • Turn Off Delay Time:20 ns
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tape & Reel (TR)
  • Published:2017
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:8
  • Termination:SMD/SMT
  • ECCN Code:EAR99
  • Resistance:100mOhm
  • Terminal Finish:Tin (Sn)
  • Voltage - Rated DC:60V
  • Max Power Dissipation:1.6W
  • Terminal Form:GULL WING
  • Current Rating:3.5A
  • Element Configuration:Dual
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:1.6W
  • Turn On Delay Time:5 ns
  • Power - Max:900mW
  • FET Type:2 N-Channel (Dual)
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:100m Ω @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds:345pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
  • Rise Time:7.5ns
  • Fall Time (Typ):7 ns
  • Continuous Drain Current (ID):3.5A
  • Threshold Voltage:1.7V
  • Gate to Source Voltage (Vgs):20V
  • Drain to Source Breakdown Voltage:60V
  • Pulsed Drain Current-Max (IDM):10A
  • Dual Supply Voltage:60V
  • FET Technology:METAL-OXIDE SEMICONDUCTOR
  • FET Feature:Logic Level Gate
  • Nominal Vgs:1.7 V
  • Height:1.57mm
  • Length:4.9mm
  • Width:3.9mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 79999

  • 1+: $2.03527
  • 10+: $1.92006
  • 100+: $1.81138
  • 500+: $1.70885
  • 1000+: $1.61212

小計金額 $2.03527

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