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NDS9945
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Arrays
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET 2N-CH 60V 3.5A 8-SOIC
Date Sheet
在庫數 79999
- 1+: $2.03527
- 10+: $1.92006
- 100+: $1.81138
- 500+: $1.70885
- 1000+: $1.61212
小計金額 $2.03527
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time:11 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154, 3.90mm Width)
- Number of Pins:8
- Weight:230.4mg
- Transistor Element Material:SILICON
- Number of Elements:2
- Turn Off Delay Time:20 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2017
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:100mOhm
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:60V
- Max Power Dissipation:1.6W
- Terminal Form:GULL WING
- Current Rating:3.5A
- Element Configuration:Dual
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:1.6W
- Turn On Delay Time:5 ns
- Power - Max:900mW
- FET Type:2 N-Channel (Dual)
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:100m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:345pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
- Rise Time:7.5ns
- Fall Time (Typ):7 ns
- Continuous Drain Current (ID):3.5A
- Threshold Voltage:1.7V
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:60V
- Pulsed Drain Current-Max (IDM):10A
- Dual Supply Voltage:60V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:Logic Level Gate
- Nominal Vgs:1.7 V
- Height:1.57mm
- Length:4.9mm
- Width:3.9mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 79999
- 1+: $2.03527
- 10+: $1.92006
- 100+: $1.81138
- 500+: $1.70885
- 1000+: $1.61212
小計金額 $2.03527
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