FDC6321C

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
SOT-23-6 Thin, TSOT-23-6
MOSFET N/P-CH 25V SSOT-6
Date Sheet

在庫數 6000

1+： $0.86709
10+： $0.81801
100+： $0.77170
500+： $0.72802
1000+： $0.68681

小計金額 $0.86709

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：680mA 460mA
Number of Elements：2
Turn Off Delay Time：55 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2015
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Resistance：450mOhm
Max Power Dissipation：900mW
Terminal Form：GULL WING
Current Rating：680mA
Number of Channels：2
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：900mW
Turn On Delay Time：3 ns
Power - Max：700mW
FET Type：N and P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 5V
Rise Time：9ns
Polarity/Channel Type：N-CHANNEL AND P-CHANNEL
Fall Time (Typ)：9 ns
Continuous Drain Current (ID)：460mA
Threshold Voltage：800mV
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：25V
Dual Supply Voltage：25V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：800 mV
Feedback Cap-Max (Crss)：9 pF
Height：1.1mm
Length：3mm
Width：1.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 6000

1+： $0.86709
10+： $0.81801
100+： $0.77170
500+： $0.72802
1000+： $0.68681

小計金額 $0.86709

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FDC6321C