FDD5614P

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
ON SEMICONDUCTOR - FDD5614P - P CHANNEL MOSFET, 60V, 15A, TO-252
Date Sheet

在庫數 22095

1+： $0.86068
10+： $0.81196
100+： $0.76600
500+： $0.72264
1000+： $0.68174

小計金額 $0.86068

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 9 hours ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：4.535924g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：15A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：3.8W Ta 42W Tc
Turn Off Delay Time：19 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：100MOhm
Voltage - Rated DC：-60V
Terminal Form：GULL WING
Current Rating：-15A
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Voltage：60V
Element Configuration：Single
Current：15A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：42W
Case Connection：DRAIN
Turn On Delay Time：7 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：100m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：759pF @ 30V
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Rise Time：10ns
Vgs (Max)：±20V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：-15A
Threshold Voltage：-1.6V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：-60V
Dual Supply Voltage：-60V
Avalanche Energy Rating (Eas)：90 mJ
Max Junction Temperature (Tj)：175°C
Nominal Vgs：-1.6 V
Height：2.39mm
Length：6.73mm
Width：6.6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 22095

1+： $0.86068
10+： $0.81196
100+： $0.76600
500+： $0.72264
1000+： $0.68174

小計金額 $0.86068

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FDD5614P