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STD12NF06T4

在庫數 28701

  • 1+: $1.41997
  • 10+: $1.33959
  • 100+: $1.26377
  • 500+: $1.19223
  • 1000+: $1.12475

小計金額 $1.41997

仕様 よくある質問
  • Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
  • Contact Plating:Tin
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:12A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):30W Tc
  • Turn Off Delay Time:17 ns
  • Operating Temperature:-55°C~175°C TJ
  • Packaging:Cut Tape (CT)
  • Series:STripFET™ II
  • JESD-609 Code:e3
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:2
  • ECCN Code:EAR99
  • Resistance:100mOhm
  • Voltage - Rated DC:60V
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):260
  • Current Rating:12A
  • Time@Peak Reflow Temperature-Max (s):30
  • Base Part Number:STD12
  • Pin Count:3
  • JESD-30 Code:R-PSSO-G2
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:30W
  • Case Connection:DRAIN
  • Turn On Delay Time:7 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:100m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds:315pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
  • Rise Time:18ns
  • Vgs (Max):±20V
  • Fall Time (Typ):6 ns
  • Continuous Drain Current (ID):12A
  • Threshold Voltage:3V
  • Gate to Source Voltage (Vgs):20V
  • Drain to Source Breakdown Voltage:60V
  • Pulsed Drain Current-Max (IDM):48A
  • Height:2.4mm
  • Length:6.6mm
  • Width:6.2mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 28701

  • 1+: $1.41997
  • 10+: $1.33959
  • 100+: $1.26377
  • 500+: $1.19223
  • 1000+: $1.12475

小計金額 $1.41997

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