FDD5612

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 60V 5.4A DPAK
Date Sheet

在庫數 847

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 9 hours ago)
Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5.4A Ta
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：3.8W Ta 42W Tc
Turn Off Delay Time：24 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2016
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：64MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：60V
Terminal Form：GULL WING
Current Rating：18A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：42W
Case Connection：DRAIN
Turn On Delay Time：8 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：55m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：660pF @ 30V
Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
Rise Time：4ns
Vgs (Max)：±20V
Fall Time (Typ)：4 ns
Continuous Drain Current (ID)：18A
Threshold Voltage：2.4V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：60V
Dual Supply Voltage：60V
Avalanche Energy Rating (Eas)：90 mJ
Nominal Vgs：2.4 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 847

小計金額 $0.00000

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FDD5612