STD25NF10LT4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 100V 25A DPAK
Date Sheet

在庫數 60000

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：4.535924g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：25A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：100W Tc
Turn Off Delay Time：58 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Cut Tape (CT)
Series：STripFET™ II
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：35mOhm
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：100V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：25A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD25N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Voltage：100V
Element Configuration：Single
Current：17A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：100W
Case Connection：DRAIN
Turn On Delay Time：20 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：35m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1710pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：52nC @ 5V
Rise Time：40ns
Vgs (Max)：±16V
Fall Time (Typ)：20 ns
Continuous Drain Current (ID)：25A
Threshold Voltage：2.5V
Gate to Source Voltage (Vgs)：16V
Drain to Source Breakdown Voltage：100V
Avalanche Energy Rating (Eas)：450 mJ
Max Junction Temperature (Tj)：175°C
Nominal Vgs：2.5 V
Height：2.63mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 60000

小計金額 $0.00000

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STD25NF10LT4