FDV302P

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-236-3, SC-59, SOT-23-3
MOSFET P-CH 25V 120MA SOT-23
Date Sheet

在庫數 17066

1+： $0.03010
10+： $0.02839
100+： $0.02678
500+： $0.02527
1000+： $0.02384

小計金額 $0.03010

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 16 hours ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Weight：30mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：120mA Ta
Drive Voltage (Max Rds On, Min Rds On)：2.7V 4.5V
Number of Elements：1
Power Dissipation (Max)：350mW Ta
Turn Off Delay Time：9 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1997
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：13Ohm
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：-25V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-120mA
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：350mW
Turn On Delay Time：5 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：11pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：0.31nC @ 4.5V
Rise Time：8ns
Drain to Source Voltage (Vdss)：25V
Vgs (Max)：±8V
Fall Time (Typ)：8 ns
Continuous Drain Current (ID)：120mA
Threshold Voltage：-1V
Gate to Source Voltage (Vgs)：-8V
Drain to Source Breakdown Voltage：-25V
Dual Supply Voltage：-25V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：-1 V
Height：1.11mm
Length：2.92mm
Width：1.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 17066

1+： $0.03010
10+： $0.02839
100+： $0.02678
500+： $0.02527
1000+： $0.02384

小計金額 $0.03010

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FDV302P