FDV301N

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-236-3, SC-59, SOT-23-3
MOSFET N-CH 25V 220MA SOT-23
Date Sheet

在庫數 33000

1+： $0.19894
10+： $0.18768
100+： $0.17706
500+： $0.16704
1000+： $0.15758

小計金額 $0.19894

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Transistor Element Material：SILICON
Manufacturer Package Identifier：SOT−23 (TO−236) CASE 318−08 ISSUE AR
Current - Continuous Drain (Id) @ 25℃：220mA Ta
Drive Voltage (Max Rds On, Min Rds On)：2.7V 4.5V
Number of Elements：1
Power Dissipation (Max)：350mW Ta
Turn Off Delay Time：3.5 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1999
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：4Ohm
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：25V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：220mA
Time@Peak Reflow Temperature-Max (s)：30
Number of Channels：1
Voltage：50V
Element Configuration：Single
Current：2A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：350mW
Turn On Delay Time：3.2 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.06V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
Rise Time：6ns
Vgs (Max)：±8V
Fall Time (Typ)：6 ns
Continuous Drain Current (ID)：220mA
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：25V
Dual Supply Voltage：25V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：850 mV
Height：1.11mm
Length：2.92mm
Width：3.05mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 33000

1+： $0.19894
10+： $0.18768
100+： $0.17706
500+： $0.16704
1000+： $0.15758

小計金額 $0.19894

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FDV301N