FDV304P

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-236-3, SC-59, SOT-23-3
ON SEMICONDUCTOR - FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount
Date Sheet

在庫數 47878

1+： $0.38836
10+： $0.36638
100+： $0.34564
500+： $0.32608
1000+： $0.30762

小計金額 $0.38836

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 17 hours ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：460mA Ta
Drive Voltage (Max Rds On, Min Rds On)：2.7V 4.5V
Number of Elements：1
Power Dissipation (Max)：350mW Ta
Turn Off Delay Time：55 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1997
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：1.5Ohm
Voltage - Rated DC：-25V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-460mA
Time@Peak Reflow Temperature-Max (s)：30
Number of Channels：1
Voltage：25V
Element Configuration：Single
Current：46A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：350mW
Turn On Delay Time：7 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：63pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 4.5V
Rise Time：8ns
Vgs (Max)：±8V
Fall Time (Typ)：8 ns
Continuous Drain Current (ID)：460mA
Threshold Voltage：-860mV
Gate to Source Voltage (Vgs)：-8V
Drain to Source Breakdown Voltage：-25V
Dual Supply Voltage：-25V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：-860 mV
Height：1.11mm
Length：2.92mm
Width：1.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 47878

1+： $0.38836
10+： $0.36638
100+： $0.34564
500+： $0.32608
1000+： $0.30762

小計金額 $0.38836

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FDV304P