FDS2572

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
Trans MOSFET N-CH 150V 4.9A 8-Pin SOIC N T/R
Date Sheet

在庫數 900

1+： $2.19154
10+： $2.06749
100+： $1.95046
500+： $1.84006
1000+： $1.73590

小計金額 $2.19154

仕様よくある質問

Factory Lead Time：12 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4.9A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：44 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：UltraFET™
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 22 hours ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：47mOhm
Voltage - Rated DC：150V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：4.9A
Time@Peak Reflow Temperature-Max (s)：30
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：14 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：47m Ω @ 4.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
Rise Time：4ns
Vgs (Max)：±20V
Fall Time (Typ)：22 ns
Continuous Drain Current (ID)：4.9A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：150V
Length：5mm
Height：1.5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 900

1+： $2.19154
10+： $2.06749
100+： $1.95046
500+： $1.84006
1000+： $1.73590

小計金額 $2.19154

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FDS2572