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STS5N15F4
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET N-channel 150 V StripFET
Date Sheet
在庫數 6420
- 1+： $2.20468
- 10+： $2.07989
- 100+： $1.96216
- 500+： $1.85109
- 1000+： $1.74631
小計金額 $2.20468
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time：20 Weeks
- Package / Case：8-SOIC (0.154, 3.90mm Width)
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Number of Pins：8
- Transistor Element Material：SILICON
- Number of Elements：1
- Current - Continuous Drain (Id) @ 25℃：5A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Power Dissipation (Max)：2.5W Tc
- Turn Off Delay Time：39.7 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Cut Tape (CT)
- Series：DeepGATE™, STripFET™
- JESD-609 Code：e4
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：8
- ECCN Code：EAR99
- Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
- Additional Feature：AVALANCHE RATED
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Base Part Number：STS5N
- Pin Count：8
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：2.5W
- Turn On Delay Time：13.5 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：63m Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：2710pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：48nC @ 10V
- Rise Time：5.1ns
- Vgs (Max)：±20V
- Fall Time (Typ)：11.4 ns
- Continuous Drain Current (ID)：5A
- Gate to Source Voltage (Vgs)：20V
- Drain Current-Max (Abs) (ID)：5A
- Drain-source On Resistance-Max：0.063Ohm
- Drain to Source Breakdown Voltage：150V
- Pulsed Drain Current-Max (IDM)：20A
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 6420
- 1+： $2.20468
- 10+： $2.07989
- 100+： $1.96216
- 500+： $1.85109
- 1000+： $1.74631
小計金額 $2.20468
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