画像はあくまで参考です。
FDD4141
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ON SEMICONDUCTOR - FDD4141 - Power MOSFET, P Channel, 40 V, 10.8 A, 0.0101 ohm, TO-252 (DPAK), Surface Mount
Date Sheet
在庫數 735
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time:10 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Contact Plating:Tin
- Number of Pins:3
- Weight:260.37mg
- Transistor Element Material:SILICON
- Number of Elements:1
- Power Dissipation (Max):2.4W Ta 69W Tc
- Turn Off Delay Time:38 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:3V @ 250μA
- Current - Continuous Drain (Id) @ 25℃:10.8A Ta 50A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:12.3MOhm
- Terminal Form:GULL WING
- JESD-30 Code:R-PSSO-G2
- Number of Channels:1
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.4W
- Case Connection:DRAIN
- Turn On Delay Time:10 ns
- FET Type:P-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:12.3m Ω @ 12.7A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:2775pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs:50nC @ 10V
- Rise Time:7ns
- Drain to Source Voltage (Vdss):40V
- Vgs (Max):±20V
- Fall Time (Typ):15 ns
- Continuous Drain Current (ID):10.8A
- Threshold Voltage:-1.8V
- JEDEC-95 Code:TO-252AA
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):50A
- Drain to Source Breakdown Voltage:-40V
- Max Junction Temperature (Tj):150°C
- Nominal Vgs:-1.8 V
- Width:6.22mm
- Height:2.517mm
- Length:6.73mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free











