FDD6690A

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 30V 12A 3-Pin(2 Tab) TO-252 T/R
Date Sheet

在庫數 2500

1+： $0.55667
10+： $0.52516
100+： $0.49543
500+： $0.46739
1000+： $0.44093

小計金額 $0.55667

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 18 hours ago)
Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12A Ta 46A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：3.3W Ta 56W Tc
Turn Off Delay Time：29 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2017
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：12MOhm
Terminal Finish：Tin (Sn)
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：30V
Terminal Form：GULL WING
Current Rating：46A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.3W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：12m Ω @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：18nC @ 5V
Rise Time：7ns
Vgs (Max)：±20V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：46A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Dual Supply Voltage：30V
Nominal Vgs：1.9 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2500

1+： $0.55667
10+： $0.52516
100+： $0.49543
500+： $0.46739
1000+： $0.44093

小計金額 $0.55667

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FDD6690A