FDD4685

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
ON SEMICONDUCTOR - FDD4685 - MOSFET Transistor, P Channel, 8.4 mA, -40 V, 0.023 ohm, 10 V, 1.6 V
Date Sheet

在庫數 63200

1+： $1.36890
10+： $1.29142
100+： $1.21832
500+： $1.14935
1000+： $1.08430

小計金額 $1.36890

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 hours ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：8.4A Ta 32A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：69W Tc
Turn Off Delay Time：34 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：27MOhm
Voltage - Rated DC：-40V
Terminal Form：GULL WING
Current Rating：-8.4A
Base Part Number：FDD4685
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：69W
Case Connection：DRAIN
Turn On Delay Time：8 ns
FET Type：P-Channel
Rds On (Max) @ Id, Vgs：27m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2380pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：27nC @ 5V
Rise Time：15ns
Drain to Source Voltage (Vdss)：40V
Vgs (Max)：±20V
Fall Time (Typ)：14 ns
Continuous Drain Current (ID)：8.4mA
Threshold Voltage：-1.6V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：40A
Drain to Source Breakdown Voltage：-40V
Dual Supply Voltage：-40V
Nominal Vgs：-1.6 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 63200

1+： $1.36890
10+： $1.29142
100+： $1.21832
500+： $1.14935
1000+： $1.08430

小計金額 $1.36890

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FDD4685