FDC655BN

ON Semiconductor
Transistors - FETs, MOSFETs - Single
SOT-23-6 Thin, TSOT-23-6
MOSFET N-CH 30V 6.3A SSOT-6
Date Sheet

在庫數 21000

1+： $0.59673
10+： $0.56296
100+： $0.53109
500+： $0.50103
1000+： $0.47267

小計金額 $0.59673

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：13 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：6.3A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.6W Ta
Turn Off Delay Time：15 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Resistance：25MOhm
Additional Feature：ULTRA-LOW RESISTANCE
Voltage - Rated DC：30V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：6.3A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.6W
Turn On Delay Time：6 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：25m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：570pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Rise Time：4ns
Vgs (Max)：±20V
Fall Time (Typ)：4 ns
Continuous Drain Current (ID)：6.3A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：1.9 V
Feedback Cap-Max (Crss)：90 pF
Height：1.1mm
Length：3mm
Width：1.7mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 21000

1+： $0.59673
10+： $0.56296
100+： $0.53109
500+： $0.50103
1000+： $0.47267

小計金額 $0.59673

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FDC655BN