FDN336P

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-236-3, SC-59, SOT-23-3
Trans MOSFET P-CH 20V 1.3A 3-Pin SuperSOT T/R
Date Sheet

在庫數 9000000

1+： $0.55280
10+： $0.52151
100+： $0.49199
500+： $0.46414
1000+： $0.43787

小計金額 $0.55280

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Weight：30mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1.3A Ta
Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
Number of Elements：1
Power Dissipation (Max)：500mW Ta
Turn Off Delay Time：16 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：200mOhm
Voltage - Rated DC：-20V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-1.3A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：500mW
Turn On Delay Time：7 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：200m Ω @ 1.3A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V
Rise Time：12ns
Drain to Source Voltage (Vdss)：20V
Vgs (Max)：±8V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：1.2A
Threshold Voltage：-900mV
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：-20V
Dual Supply Voltage：-20V
Nominal Vgs：-900 mV
Height：940μm
Length：2.92mm
Width：1.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 9000000

1+： $0.55280
10+： $0.52151
100+： $0.49199
500+： $0.46414
1000+： $0.43787

小計金額 $0.55280

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FDN336P