FDMC7200

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-PowerWDFN
MOSFET iFET - Smart Harvest
Date Sheet

在庫數 2434

1+： $0.96432
10+： $0.90973
100+： $0.85824
500+： $0.80966
1000+： $0.76383

小計金額 $0.96432

仕様よくある質問

Factory Lead Time：23 Weeks
Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Package / Case：8-PowerWDFN
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：8
Weight：186mg
Transistor Element Material：SILICON
Turn Off Delay Time：38 ns
Number of Elements：2
Current - Continuous Drain (Id) @ 25℃：6A 8A
Series：PowerTrench®
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Max Power Dissipation：900mW
Terminal Form：NO LEAD
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Number of Channels：2
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN SOURCE
Turn On Delay Time：13 ns
Power - Max：700mW 900mW
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：23.5m Ω @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Rise Time：4ns
Fall Time (Typ)：6 ns
Continuous Drain Current (ID)：8A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：6A
Drain to Source Breakdown Voltage：30V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Feedback Cap-Max (Crss)：30 pF
Width：3mm
Length：3mm
Height：800μm
RoHS Status：ROHS3 Compliant

在庫數 2434

1+： $0.96432
10+： $0.90973
100+： $0.85824
500+： $0.80966
1000+： $0.76383

小計金額 $0.96432

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FDMC7200