FDS8884

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R
Date Sheet

在庫數 945

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：8.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：42 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2006
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature：FAST SWITCHING
Voltage - Rated DC：30V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：8.5A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：23m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：635pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Rise Time：9ns
Vgs (Max)：±20V
Fall Time (Typ)：21 ns
Continuous Drain Current (ID)：8.5A
Threshold Voltage：1.7V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.023Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：40A
Avalanche Energy Rating (Eas)：32 mJ
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 945

小計金額 $0.00000

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FDS8884