FQT4N25TF

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-261-4, TO-261AA
MOSFET 250V Single
Date Sheet

在庫數 2800

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Number of Pins：3
Weight：188mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：830mA Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Tc
Turn Off Delay Time：6.4 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：4
ECCN Code：EAR99
Resistance：1.75Ohm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：250V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：830mA
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PDSO-G4
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：6.8 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.75 Ω @ 415mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：5.6nC @ 10V
Rise Time：45ns
Vgs (Max)：±30V
Fall Time (Typ)：22 ns
Continuous Drain Current (ID)：830mA
Threshold Voltage：5V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：250V
Avalanche Energy Rating (Eas)：52 mJ
Height：1.7mm
Length：6.7mm
Width：3.7mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2800

小計金額 $0.00000

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FQT4N25TF