FQT3P20TF

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-261-4, TO-261AA
Trans MOSFET P-CH 200V 0.67A 4-Pin(3 Tab) SOT-223 T/R
Date Sheet

在庫數 8000

1+： $1.03580
10+： $0.97717
100+： $0.92186
500+： $0.86968
1000+： $0.82045

小計金額 $1.03580

仕様よくある質問

Factory Lead Time：18 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Weight：188mg
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：2.5W Tc
Turn Off Delay Time：12 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Current - Continuous Drain (Id) @ 25℃：670mA Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：4
ECCN Code：EAR99
Resistance：2.7Ohm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-200V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-670mA
JESD-30 Code：R-PDSO-G4
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：8.5 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：2.7 Ω @ 335mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
Rise Time：35ns
Drain to Source Voltage (Vdss)：200V
Vgs (Max)：±30V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：670mA
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：0.67A
Drain to Source Breakdown Voltage：-200V
Pulsed Drain Current-Max (IDM)：2.7A
Height：1.6mm
Length：6.5mm
Width：3.56mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 8000

1+： $1.03580
10+： $0.97717
100+： $0.92186
500+： $0.86968
1000+： $0.82045

小計金額 $1.03580

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