FQT2P25TF

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-261-4, TO-261AA
Trans MOSFET P-CH 250V 0.55A 4-Pin(3 Tab) SOT-223 T/R
Date Sheet

在庫數 60000

1+： $1.18430
10+： $1.11727
100+： $1.05403
500+： $0.99436
1000+： $0.93808

小計金額 $1.18430

仕様よくある質問

Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Number of Pins：4
Weight：188mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：550mA Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Tc
Turn Off Delay Time：12 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：4
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-250V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-550mA
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：8.5 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4 Ω @ 275mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：8.5nC @ 10V
Rise Time：40ns
Drain to Source Voltage (Vdss)：250V
Vgs (Max)：±30V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：550mA
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：0.55A
Drain-source On Resistance-Max：4Ohm
Drain to Source Breakdown Voltage：-250V
Pulsed Drain Current-Max (IDM)：2.2A
Height：1.8mm
Length：6.7mm
Width：3.7mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 60000

1+： $1.18430
10+： $1.11727
100+： $1.05403
500+： $0.99436
1000+： $0.93808

小計金額 $1.18430

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