FDMS86350ET80

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerTDFN
MOSFET TV Monitor/POE/Network/Telcom
Date Sheet

在庫數 30000

1+： $9.66615
10+： $9.11901
100+： $8.60284
500+： $8.11588
1000+： $7.65649

小計金額 $9.66615

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Weight：56.5mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：25A Ta 198A Tc
Drive Voltage (Max Rds On, Min Rds On)：8V 10V
Number of Elements：1
Power Dissipation (Max)：3.3W Ta 187W Tc
Turn Off Delay Time：40 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Position：DUAL
Terminal Form：NO LEAD
Peak Reflow Temperature (Cel)：260
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PDSO-N5
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
Turn On Delay Time：50 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：2.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：8030pF @ 40V
Gate Charge (Qg) (Max) @ Vgs：155nC @ 10V
Rise Time：34ns
Vgs (Max)：±20V
Fall Time (Typ)：11 ns
Continuous Drain Current (ID)：198A
JEDEC-95 Code：MO-240AA
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0024Ohm
Drain to Source Breakdown Voltage：80V
Pulsed Drain Current-Max (IDM)：693A
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 30000

1+： $9.66615
10+： $9.11901
100+： $8.60284
500+： $8.11588
1000+： $7.65649

小計金額 $9.66615

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FDMS86350ET80