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FDB024N08BL7
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-263-7, D2Pak (6 Leads + Tab)
- Trans MOSFET N-CH 80V 229A 7-Pin(6 Tab) D2PAK T/R
Date Sheet
在庫數 4760
- 1+: $4.96679
- 10+: $4.68565
- 100+: $4.42042
- 500+: $4.17021
- 1000+: $3.93416
小計金額 $4.96679
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time:16 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-263-7, D2Pak (6 Leads + Tab)
- Number of Pins:7
- Weight:1.312g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:120A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):246W Tc
- Turn Off Delay Time:87 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2014
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):245
- JESD-30 Code:R-PSSO-G6
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:246W
- Case Connection:DRAIN
- Turn On Delay Time:47 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:2.4m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:13530pF @ 40V
- Gate Charge (Qg) (Max) @ Vgs:178nC @ 10V
- Rise Time:66ns
- Drain to Source Voltage (Vdss):80V
- Vgs (Max):±20V
- Fall Time (Typ):41 ns
- Continuous Drain Current (ID):229A
- JEDEC-95 Code:TO-263CB
- Gate to Source Voltage (Vgs):20V
- Drain-source On Resistance-Max:0.0024Ohm
- DS Breakdown Voltage-Min:80V
- Height:4.7mm
- Length:10.2mm
- Width:9.4mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
在庫數 4760
- 1+: $4.96679
- 10+: $4.68565
- 100+: $4.42042
- 500+: $4.17021
- 1000+: $3.93416
小計金額 $4.96679
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