FCB070N65S3

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FAIRCHILD SEMICONDUCTOR FCB070N65S3 Power MOSFET, N Channel, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 VNew
Date Sheet

在庫數 10000

1+： $6.75146
10+： $6.36930
100+： $6.00877
500+： $5.66866
1000+： $5.34779

小計金額 $6.75146

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Factory Lead Time：13 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：44A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：312W Tc
Turn Off Delay Time：89 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：SuperFET® III
Published：2016
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Additional Feature：AVALANCHE RATED, HIGH VOLTAGE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：312W
Case Connection：DRAIN
Turn On Delay Time：26 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：70m Ω @ 22A, 10V
Vgs(th) (Max) @ Id：4.5V @ 4.4mA
Input Capacitance (Ciss) (Max) @ Vds：3090pF @ 400V
Gate Charge (Qg) (Max) @ Vgs：78nC @ 10V
Vgs (Max)：±30V
Continuous Drain Current (ID)：44A
Threshold Voltage：4.5V
Gate to Source Voltage (Vgs)：30V
Drain-source On Resistance-Max：0.07Ohm
Drain to Source Breakdown Voltage：650V
Max Junction Temperature (Tj)：150°C
Height：4.83mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant

在庫數 10000

1+： $6.75146
10+： $6.36930
100+： $6.00877
500+： $5.66866
1000+： $5.34779

小計金額 $6.75146

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FCB070N65S3