FCPF20N60

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
MOSFET N-CH 600V 20A TO220F
Date Sheet

在庫數 3

1+： $9.24697
10+： $8.72356
100+： $8.22977
500+： $7.76394
1000+： $7.32447

小計金額 $9.24697

仕様よくある質問

Lifecycle Status：ACTIVE, NOT REC (Last Updated: 3 days ago)
Factory Lead Time：13 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Weight：2.27g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：20A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：39W Tc
Turn Off Delay Time：230 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：SuperFET™
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Not For New Designs
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：190MOhm
Voltage - Rated DC：600V
Current Rating：20A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：39W
Case Connection：ISOLATED
Turn On Delay Time：62 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：3080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：98nC @ 10V
Rise Time：140ns
Vgs (Max)：±30V
Fall Time (Typ)：65 ns
Continuous Drain Current (ID)：20A
Threshold Voltage：5V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：60A
Avalanche Energy Rating (Eas)：690 mJ
Height：9.19mm
Length：10.16mm
Width：4.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3

1+： $9.24697
10+： $8.72356
100+： $8.22977
500+： $7.76394
1000+： $7.32447

小計金額 $9.24697

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FCPF20N60