FQD2N90TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 900V 1.7A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 575

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：4 Weeks
Contact Plating：Tin
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1.7A Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Turn Off Delay Time：20 ns
Power Dissipation (Max)：2.5W Ta 50W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：10V
Series：QFET®
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Voltage - Rated DC：900V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：1.7A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：7.2 Ω @ 850mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Rise Time：35ns
Vgs (Max)：±30V
Fall Time (Typ)：30 ns
Continuous Drain Current (ID)：1.7A
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：900V
Pulsed Drain Current-Max (IDM)：6.8A
RoHS Status：ROHS3 Compliant
REACH SVHC：not_compliant
Lead Free：Lead Free

在庫數 575

小計金額 $0.00000

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FQD2N90TM