FQD2N80TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
FAIRCHILD SEMICONDUCTOR FQD2N80TM N CHANNEL MOSFET, 800V, 1.8A
Date Sheet

在庫數 16820

1+： $1.33075
10+： $1.25543
100+： $1.18437
500+： $1.11733
1000+： $1.05408

小計金額 $1.33075

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：4 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1.8A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 50W Tc
Turn Off Delay Time：25 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2000
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：6.3Ohm
Voltage - Rated DC：800V
Terminal Form：GULL WING
Current Rating：1.8A
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：12 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：6.3 Ω @ 900mA, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Rise Time：30ns
Vgs (Max)：±30V
Fall Time (Typ)：28 ns
Continuous Drain Current (ID)：1.8A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：800V
Pulsed Drain Current-Max (IDM)：7.2A
Max Junction Temperature (Tj)：150°C
Nominal Vgs：5 V
Height：2.517mm
Length：6.6mm
Width：6.1mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 16820

1+： $1.33075
10+： $1.25543
100+： $1.18437
500+： $1.11733
1000+： $1.05408

小計金額 $1.33075

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FQD2N80TM