FQD1N80TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 800V 1A DPAK
Date Sheet

在庫數 36000

1+： $1.26526
10+： $1.19364
100+： $1.12608
500+： $1.06234
1000+： $1.00220

小計金額 $1.26526

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：4 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 45W Tc
Turn Off Delay Time：15 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：20Ohm
Voltage - Rated DC：800V
Terminal Form：GULL WING
Current Rating：1A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：20 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：195pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：7.2nC @ 10V
Rise Time：25ns
Vgs (Max)：±30V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：1mA
Threshold Voltage：5V
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：1A
Drain to Source Breakdown Voltage：800V
Pulsed Drain Current-Max (IDM)：4A
Avalanche Energy Rating (Eas)：90 mJ
Nominal Vgs：5 V
Height：2.3mm
Length：6.6mm
Width：6.1mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 36000

1+： $1.26526
10+： $1.19364
100+： $1.12608
500+： $1.06234
1000+： $1.00220

小計金額 $1.26526

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