画像はあくまで参考です。
FDD5353
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Trans MOSFET N-CH 60V 11.5A 3-Pin(2 Tab) DPAK T/R
Date Sheet
在庫數 2500
- 1+: $2.40468
- 10+: $2.26856
- 100+: $2.14015
- 500+: $2.01901
- 1000+: $1.90473
小計金額 $2.40468
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 hours ago)
- Factory Lead Time:8 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Weight:260.37mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:11.5A Ta 50A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):3.1W Ta 69W Tc
- Turn Off Delay Time:36 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2007
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:12.3MOhm
- Terminal Finish:Tin (Sn)
- Terminal Form:GULL WING
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:3.1W
- Case Connection:DRAIN
- Turn On Delay Time:11 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:12.3m Ω @ 10.7A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:3215pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
- Rise Time:6ns
- Vgs (Max):±20V
- Fall Time (Typ):4 ns
- Continuous Drain Current (ID):11.5A
- Threshold Voltage:1.8V
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):54A
- Drain to Source Breakdown Voltage:60V
- Nominal Vgs:1.8 V
- Height:2.39mm
- Length:6.73mm
- Width:6.22mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 2500
- 1+: $2.40468
- 10+: $2.26856
- 100+: $2.14015
- 500+: $2.01901
- 1000+: $1.90473
小計金額 $2.40468
類似スペック製品













