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MTD3055VL
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Trans MOSFET N-CH 60V 12A 3-Pin(2 Tab) TO-252AA T/R
Date Sheet
在庫數 28628
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Weight:260.37mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:12A Tc
- Drive Voltage (Max Rds On, Min Rds On):5V
- Number of Elements:1
- Power Dissipation (Max):3.9W Ta 48W Tc
- Turn Off Delay Time:30 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Published:2000
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:107mOhm
- Additional Feature:AVALANCHE RATED
- Voltage - Rated DC:60V
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):240
- Current Rating:12A
- Time@Peak Reflow Temperature-Max (s):30
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:3.9W
- Case Connection:DRAIN
- Turn On Delay Time:20 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:180m Ω @ 6A, 5V
- Vgs(th) (Max) @ Id:2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:570pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:10nC @ 5V
- Rise Time:190ns
- Vgs (Max):±20V
- Fall Time (Typ):90 ns
- Continuous Drain Current (ID):12A
- Threshold Voltage:1.5V
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:60V
- Pulsed Drain Current-Max (IDM):42A
- Dual Supply Voltage:60V
- Avalanche Energy Rating (Eas):72 mJ
- Nominal Vgs:1.5 V
- Height:2.39mm
- Length:6.73mm
- Width:6.22mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free












