STI6N62K3

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-262-3 Long Leads, I2Pak, TO-262AA
MOSFET N-CH 620V 5.5A I2PAK
Date Sheet

在庫數 1000

1+： $1.60047
10+： $1.50988
100+： $1.42441
500+： $1.34378
1000+： $1.26772

小計金額 $1.60047

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：12 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：90W Tc
Turn Off Delay Time：49 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：SuperMESH3™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Additional Feature：ULTRA LOW-ON RESISTANCE
Terminal Position：SINGLE
Base Part Number：STI6N
Pin Count：3
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Turn On Delay Time：22 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.2 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id：4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：875pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
Rise Time：12ns
Drain to Source Voltage (Vdss)：620V
Vgs (Max)：±30V
Fall Time (Typ)：20 ns
Continuous Drain Current (ID)：5.5A
Threshold Voltage：3.75V
Gate to Source Voltage (Vgs)：30V
Pulsed Drain Current-Max (IDM)：22A
DS Breakdown Voltage-Min：620V
Avalanche Energy Rating (Eas)：140 mJ
Nominal Vgs：3.75 V
Height：10.75mm
Length：10.4mm
Width：4.6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1000

1+： $1.60047
10+： $1.50988
100+： $1.42441
500+： $1.34378
1000+： $1.26772

小計金額 $1.60047

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STI6N62K3