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FQU13N06LTU
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- MOSFET N-CH 60V 11A IPAK
Date Sheet
在庫數 1400
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
- Factory Lead Time：9 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins：3
- Weight：343.08mg
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：11A Tc
- Drive Voltage (Max Rds On, Min Rds On)：5V 10V
- Number of Elements：1
- Power Dissipation (Max)：2.5W Ta 28W Tc
- Turn Off Delay Time：20 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：QFET®
- Published：2001
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：60V
- Current Rating：11A
- Number of Channels：1
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：2.5W
- Turn On Delay Time：8 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：115m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：350pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：6.4nC @ 5V
- Rise Time：90ns
- Vgs (Max)：±20V
- Fall Time (Typ)：40 ns
- Continuous Drain Current (ID)：11A
- Threshold Voltage：2.5V
- Gate to Source Voltage (Vgs)：20V
- Drain to Source Breakdown Voltage：60V
- Pulsed Drain Current-Max (IDM)：44A
- Avalanche Energy Rating (Eas)：90 mJ
- Max Junction Temperature (Tj)：150°C
- Height：8.58mm
- Length：6.6mm
- Width：2.3mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 1400
小計金額 $0.00000
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