FDP55N06

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET SINGLE N-CH 150V ULTRAFET TRENCH
Date Sheet

在庫數 25000

1+： $0.62500
10+： $0.58962
100+： $0.55625
500+： $0.52476
1000+： $0.49506

小計金額 $0.62500

仕様よくある質問

Factory Lead Time：5 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Weight：1.8g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：55A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：114W Tc
Turn Off Delay Time：70 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：UniFET™
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：22mOhm
Terminal Finish：Tin (Sn)
Additional Feature：AVALANCHE RATED
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：114W
Turn On Delay Time：30 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：22m Ω @ 27.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：37nC @ 10V
Rise Time：130ns
Vgs (Max)：±25V
Fall Time (Typ)：95 ns
Continuous Drain Current (ID)：55A
Threshold Voltage：2V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：220A
Avalanche Energy Rating (Eas)：480 mJ
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 25000

1+： $0.62500
10+： $0.58962
100+： $0.55625
500+： $0.52476
1000+： $0.49506

小計金額 $0.62500

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FDP55N06