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STF3N80K5
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- MOSFET N-CH 800V 2.5A TO220FP
Date Sheet
在庫數 9000
- 1+: $2.06277
- 10+: $1.94600
- 100+: $1.83585
- 500+: $1.73194
- 1000+: $1.63390
小計金額 $2.06277
仕様 よくある質問
- Factory Lead Time:17 Weeks
- Lifecycle Status:ACTIVE (Last Updated: 7 months ago)
- Package / Case:TO-220-3 Full Pack
- Mounting Type:Through Hole
- Mount:Through Hole
- Number of Pins:3
- Weight:329.988449mg
- Transistor Element Material:SILICON
- Turn Off Delay Time:20.5 ns
- Power Dissipation (Max):20W Tc
- Number of Elements:1
- Drive Voltage (Max Rds On, Min Rds On):10V
- Current - Continuous Drain (Id) @ 25℃:2.5A Tc
- Series:SuperMESH5™
- Packaging:Tube
- Operating Temperature:-55°C~150°C TJ
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Base Part Number:STF3N
- Number of Channels:1
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Case Connection:ISOLATED
- Turn On Delay Time:8.5 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:3.5 Ω @ 1A, 10V
- Vgs(th) (Max) @ Id:5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds:130pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs:9.5nC @ 10V
- Rise Time:7.5ns
- Fall Time (Typ):25 ns
- Continuous Drain Current (ID):2.5A
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain to Source Breakdown Voltage:800V
- Avalanche Energy Rating (Eas):65 mJ
- Width:4.6mm
- Length:10.4mm
- Height:16.4mm
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 9000
- 1+: $2.06277
- 10+: $1.94600
- 100+: $1.83585
- 500+: $1.73194
- 1000+: $1.63390
小計金額 $2.06277












