画像はあくまで参考です。
STD120N4LF6
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 40V 80A DPAK
Date Sheet
在庫數 17050
- 1+: $2.47034
- 10+: $2.33051
- 100+: $2.19859
- 500+: $2.07414
- 1000+: $1.95674
小計金額 $2.47034
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 7 months ago)
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:80A Tc
- Drive Voltage (Max Rds On, Min Rds On):5V 10V
- Number of Elements:1
- Power Dissipation (Max):110W Tc
- Turn Off Delay Time:125 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:4MOhm
- Terminal Finish:Matte Tin (Sn) - annealed
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Base Part Number:STD12
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:110W
- Case Connection:DRAIN
- Turn On Delay Time:15 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:4m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:4300pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:80nC @ 10V
- Rise Time:95ns
- Vgs (Max):±20V
- Fall Time (Typ):45 ns
- Continuous Drain Current (ID):80A
- Threshold Voltage:1V
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:40V
- Height:2.4mm
- Length:6.6mm
- Width:6.2mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 17050
- 1+: $2.47034
- 10+: $2.33051
- 100+: $2.19859
- 500+: $2.07414
- 1000+: $1.95674
小計金額 $2.47034
類似スペック製品












