STB32NM50N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II
Date Sheet

在庫數 3

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：26 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：22A Tc
Number of Elements：1
Power Dissipation (Max)：190W Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Turn Off Delay Time：110 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™ II
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 8 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB32N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：190W
Case Connection：DRAIN
Turn On Delay Time：21.5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：130m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1973pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：62.5nC @ 10V
Rise Time：9.5ns
Vgs (Max)：±25V
Fall Time (Typ)：23.6 ns
Continuous Drain Current (ID)：22A
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：500V
Pulsed Drain Current-Max (IDM)：88A
Length：10.4mm
Height：4.6mm
Width：9.35mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3

小計金額 $0.00000

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STB32NM50N