STD5NM60-1

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET N-CH 600V 5A IPAK
Date Sheet

在庫數 12000

1+： $2.74422
10+： $2.58889
100+： $2.44235
500+： $2.30410
1000+： $2.17368

小計金額 $2.74422

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：26 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：96W Tc
Turn Off Delay Time：23 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：MDmesh™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Voltage - Rated DC：650V
Peak Reflow Temperature (Cel)：260
Current Rating：8A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD5N
Pin Count：3
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：96W
Turn On Delay Time：14 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Rise Time：10ns
Vgs (Max)：±30V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：5A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：5A
Drain-source On Resistance-Max：1Ohm
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：20A
Avalanche Energy Rating (Eas)：200 mJ
Height：6.2mm
Length：6.6mm
Width：2.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 12000

1+： $2.74422
10+： $2.58889
100+： $2.44235
500+： $2.30410
1000+： $2.17368

小計金額 $2.74422

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STD5NM60-1