STB30N65M5

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB30N65M5: 650 V 0.139 Ohm Surface Mount N-Channel Power MOSFET - D2PAK
Date Sheet

在庫數 4099

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：17 Weeks
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount：Surface Mount
Number of Pins：3
Transistor Element Material：SILICON
Turn Off Delay Time：50 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Number of Elements：1
Power Dissipation (Max)：140W Tc
Current - Continuous Drain (Id) @ 25℃：22A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Series：MDmesh™ V
Operating Temperature：150°C TJ
Packaging：Cut Tape (CT)
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：139MOhm
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：AVALANCHE ENERGY RATED
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB30N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：140W
Turn On Delay Time：50 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：139m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2880pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：64nC @ 10V
Rise Time：8ns
Vgs (Max)：±25V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：22A
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：650V
Pulsed Drain Current-Max (IDM)：88A
Avalanche Energy Rating (Eas)：500 mJ
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
Lead Free：Lead Free

在庫數 4099

小計金額 $0.00000

類似スペック製品

STB30N65M5 STMicroelectronics
見積かごへ在庫數 4099
STB32N65M5 STMicroelectronics
見積かごへ在庫數 198
STB35N65M5 STMicroelectronics
見積かごへ在庫數 5795
STB34N65M5 STMicroelectronics
見積かごへ在庫數 28200

Phone

STB30N65M5