STB35N65M5

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET POWER MOSFET N-CH 650V
Date Sheet

在庫數 3000

1+： $7.39907
10+： $6.98026
100+： $6.58515
500+： $6.21240
1000+： $5.86076

小計金額 $7.39907

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：17 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：27A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：160W Tc
Turn Off Delay Time：60 ns
Operating Temperature：150°C TJ
Packaging：Cut Tape (CT)
Series：MDmesh™ V
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：98Ohm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB35N
Pin Count：4
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：160W
Case Connection：ISOLATED
Turn On Delay Time：60 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：98m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：3750pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：83nC @ 10V
Rise Time：12ns
Vgs (Max)：±25V
Fall Time (Typ)：16 ns
Continuous Drain Current (ID)：27A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：650V
Avalanche Energy Rating (Eas)：800 mJ
Height：4.6mm
Length：10.75mm
Width：10.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3000

1+： $7.39907
10+： $6.98026
100+： $6.58515
500+： $6.21240
1000+： $5.86076

小計金額 $7.39907

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STB35N65M5