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FDC610PZ
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- SOT-23-6 Thin, TSOT-23-6
- Trans MOSFET P-CH 30V 4.9A 6-Pin SuperSOT T/R
Date Sheet
在庫數 15000
- 1+: $0.58588
- 10+: $0.55271
- 100+: $0.52143
- 500+: $0.49191
- 1000+: $0.46407
小計金額 $0.58588
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:13 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Number of Pins:6
- Weight:36mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:4.9A Ta
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):1.6W Ta
- Turn Off Delay Time:33 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Number of Channels:1
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:1.6W
- Turn On Delay Time:7 ns
- FET Type:P-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:42m Ω @ 4.9A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:1005pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
- Rise Time:4ns
- Drain to Source Voltage (Vdss):30V
- Vgs (Max):±25V
- Fall Time (Typ):4 ns
- Continuous Drain Current (ID):4.9mA
- Threshold Voltage:-2.2V
- Gate to Source Voltage (Vgs):25V
- Drain Current-Max (Abs) (ID):4.9A
- Drain-source On Resistance-Max:0.042Ohm
- Drain to Source Breakdown Voltage:-30V
- Max Junction Temperature (Tj):150°C
- Height:1.1mm
- Length:3mm
- Width:1.7mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 15000
- 1+: $0.58588
- 10+: $0.55271
- 100+: $0.52143
- 500+: $0.49191
- 1000+: $0.46407
小計金額 $0.58588
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