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FDC653N

在庫數 23040

  • 1+: $0.96811
  • 10+: $0.91331
  • 100+: $0.86161
  • 500+: $0.81284
  • 1000+: $0.76683

小計金額 $0.96811

仕様 よくある質問
  • Factory Lead Time:10 Weeks
  • Contact Plating:Tin
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Number of Pins:6
  • Weight:30mg
  • Transistor Element Material:SILICON
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:2V @ 250μA
  • Current - Continuous Drain (Id) @ 25℃:5A Ta
  • Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
  • Number of Elements:1
  • Power Dissipation (Max):1.6W Ta
  • Turn Off Delay Time:13 ns
  • Published:1997
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tape & Reel (TR)
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:ACTIVE (Last Updated: 2 days ago)
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:6
  • Termination:SMD/SMT
  • ECCN Code:EAR99
  • Resistance:35MOhm
  • Voltage - Rated DC:30V
  • Terminal Position:DUAL
  • Terminal Form:GULL WING
  • Current Rating:5A
  • Number of Channels:1
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:1.6W
  • Turn On Delay Time:7.5 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:35m Ω @ 5A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:350pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
  • Rise Time:12ns
  • Vgs (Max):±20V
  • Fall Time (Typ):12 ns
  • Continuous Drain Current (ID):5A
  • Threshold Voltage:1.7V
  • Gate to Source Voltage (Vgs):20V
  • Drain Current-Max (Abs) (ID):5A
  • Drain to Source Breakdown Voltage:30V
  • Dual Supply Voltage:30V
  • Max Junction Temperature (Tj):150°C
  • Nominal Vgs:1.7 V
  • Width:1.7mm
  • Height:1.1mm
  • Length:3mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 23040

  • 1+: $0.96811
  • 10+: $0.91331
  • 100+: $0.86161
  • 500+: $0.81284
  • 1000+: $0.76683

小計金額 $0.96811

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