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STD18NF25
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 250V 17A DPAK
Date Sheet
在庫數 100000
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:12 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:17A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):110W Tc
- Turn Off Delay Time:21 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:Automotive, AEC-Q101, STripFET™ II
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn) - annealed
- Terminal Position:SINGLE
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:STD18
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:110W
- Case Connection:DRAIN
- Turn On Delay Time:8.8 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:165m Ω @ 8.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:29.5nC @ 10V
- Rise Time:17.2ns
- Drain to Source Voltage (Vdss):250V
- Vgs (Max):±20V
- Fall Time (Typ):8.8 ns
- Continuous Drain Current (ID):17A
- Gate to Source Voltage (Vgs):20V
- Pulsed Drain Current-Max (IDM):68A
- DS Breakdown Voltage-Min:250V
- Avalanche Energy Rating (Eas):54 mJ
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 100000
小計金額 $0.00000
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