STD2NK100Z

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 1000V 1.85A DPAK
Date Sheet

在庫數 828

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：12 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1.85A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：41.5 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4.5V @ 50μA
Number of Elements：1
Packaging：Tape & Reel (TR)
Series：SuperMESH™
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：8.5Ohm
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Base Part Number：STD2N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Turn On Delay Time：7.2 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.5 Ω @ 900mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：499pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
Drain to Source Voltage (Vdss)：1000V
Vgs (Max)：±30V
Continuous Drain Current (ID)：1.85A
Threshold Voltage：3.75V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：2A
Drain to Source Breakdown Voltage：1kV
Pulsed Drain Current-Max (IDM)：7.4A
Height：2.4mm
Width：6.2mm
Length：6.6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 828

小計金額 $0.00000

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STD2NK100Z