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STD2NK100Z
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 1000V 1.85A DPAK
Date Sheet
在庫數 2633
- 1+: $2.43530
- 10+: $2.29745
- 100+: $2.16741
- 500+: $2.04473
- 1000+: $1.92899
小計金額 $2.43530
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:12 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:1.85A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):70W Tc
- Turn Off Delay Time:41.5 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:SuperMESH™
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:8.5Ohm
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Base Part Number:STD2N
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:70W
- Turn On Delay Time:7.2 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:8.5 Ω @ 900mA, 10V
- Vgs(th) (Max) @ Id:4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds:499pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
- Drain to Source Voltage (Vdss):1000V
- Vgs (Max):±30V
- Continuous Drain Current (ID):1.85A
- Threshold Voltage:3.75V
- JEDEC-95 Code:TO-252AA
- Gate to Source Voltage (Vgs):30V
- Drain Current-Max (Abs) (ID):2A
- Drain to Source Breakdown Voltage:1kV
- Pulsed Drain Current-Max (IDM):7.4A
- Height:2.4mm
- Length:6.6mm
- Width:6.2mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 2633
- 1+: $2.43530
- 10+: $2.29745
- 100+: $2.16741
- 500+: $2.04473
- 1000+: $1.92899
小計金額 $2.43530
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