STD3NK100Z

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 1000V 2.5A DPAK
Date Sheet

在庫數 79

1+： $2.74949
10+： $2.59386
100+： $2.44703
500+： $2.30852
1000+： $2.17785

小計金額 $2.74949

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：12 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：90W Tc
Turn Off Delay Time：39 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：SuperMESH™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：6Ohm
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD3N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：90W
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：6 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id：4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：601pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Rise Time：7.5ns
Drain to Source Voltage (Vdss)：1000V
Vgs (Max)：±30V
Fall Time (Typ)：32 ns
Continuous Drain Current (ID)：2.5A
Threshold Voltage：3.75V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：1kV
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 79

1+： $2.74949
10+： $2.59386
100+： $2.44703
500+： $2.30852
1000+： $2.17785

小計金額 $2.74949

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STD3NK100Z